单 FET,MOSFET

结果:
46,586
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
结果46,586
选择
图片产品详情单价可用性ECAD 模型Mounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperatureSupplier Device PackagePackage / CaseTechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)
IRL40SC209
IRL40SC209 - 12V-300V N-CHANNEL
联系我们
53,116 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
D2PAK (7-Lead)
TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
MOSFET (Metal Oxide)
-
2.4V @ 250µA
478A (Tc)
4.5V, 10V
0.8mOhm @ 100A, 10V
267 nC @ 4.5 V
±20V
15270 pF @ 25 V
375W (Tc)
FDN342P
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
52,114 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
20 V
-55°C ~ 150°C (TJ)
SOT-23-3
TO-236-3, SC-59, SOT-23-3
MOSFET (Metal Oxide)
-
1.5V @ 250µA
2A (Ta)
2.5V, 4.5V
80mOhm @ 2A, 4.5V
9 nC @ 4.5 V
±12V
635 pF @ 10 V
500mW (Ta)
RFP70N06
POWER FIELD-EFFECT TRANSISTOR, 7
联系我们
52,029 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
60 V
-55°C ~ 175°C (TJ)
TO-220-3
TO-220-3
MOSFET (Metal Oxide)
-
4V @ 250µA
70A (Tc)
10V
14mOhm @ 70A, 10V
156 nC @ 20 V
±20V
2250 pF @ 25 V
150W (Tc)
FDT86106LZ
FDT86106 - N-CHANNEL POWERTRENCH
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52,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
SOT-223-4
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
-
2.2V @ 250µA
3.2A (Ta)
4.5V, 10V
108mOhm @ 3.2A, 10V
7 nC @ 10 V
±20V
315 pF @ 50 V
1W (Ta)
FQT4N25TF
POWER FIELD-EFFECT TRANSISTOR, 0
联系我们
51,700 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
250 V
-55°C ~ 150°C (TJ)
SOT-223-4
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
-
5V @ 250µA
830mA (Tc)
10V
1.75Ohm @ 415mA, 10V
5.6 nC @ 10 V
±30V
200 pF @ 25 V
2.5W (Tc)
IRFP460PBF
MOSFET N-CH 500V 20A TO247-3
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51,525 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
500 V
-55°C ~ 150°C (TJ)
TO-247AC
TO-247-3
MOSFET (Metal Oxide)
-
4V @ 250µA
20A (Tc)
10V
270mOhm @ 12A, 10V
210 nC @ 10 V
±20V
4200 pF @ 25 V
280W (Tc)
FQPF8N60C
POWER FIELD-EFFECT TRANSISTOR, 7
联系我们
51,231 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
600 V
-55°C ~ 150°C (TJ)
TO-220F-3
TO-220-3 Full Pack
MOSFET (Metal Oxide)
-
4V @ 250µA
7.5A (Tc)
10V
1.2Ohm @ 3.75A, 10V
36 nC @ 10 V
±30V
1255 pF @ 25 V
48W (Tc)
IRLL2705PBF
MOSFET N-CH 55V 3.8A SOT223
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51,120 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
55 V
-55°C ~ 150°C (TJ)
SOT-223
TO-261-4, TO-261AA
MOSFET (Metal Oxide)
-
2V @ 250µA
3.8A (Ta)
4V, 10V
40mOhm @ 3.8A, 10V
48 nC @ 10 V
±16V
870 pF @ 25 V
1W (Ta)
FQD13N06LTM
POWER FIELD-EFFECT TRANSISTOR, 1
联系我们
50,068 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
60 V
-55°C ~ 150°C (TJ)
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
2.5V @ 250µA
11A (Tc)
5V, 10V
115mOhm @ 5.5A, 10V
6.4 nC @ 5 V
±20V
350 pF @ 25 V
2.5W (Ta), 28W (Tc)
RFD3055LESM
MOSFET N-CH 60V 11A TO252AA
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50,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
60 V
-55°C ~ 175°C (TJ)
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
3V @ 250µA
11A (Tc)
5V
107mOhm @ 8A, 5V
11.3 nC @ 10 V
±16V
350 pF @ 25 V
38W (Tc)
AUIRFR2905ZTRL
联系我们
50,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
55 V
-55°C ~ 175°C (TJ)
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
4V @ 250µA
42A (Tc)
10V
14.5mOhm @ 36A, 10V
44 nC @ 10 V
±20V
1380 pF @ 25 V
110W (Tc)
FQD13N10LTM
POWER FIELD-EFFECT TRANSISTOR, 1
联系我们
50,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
2V @ 250µA
10A (Tc)
5V, 10V
180mOhm @ 5A, 10V
12 nC @ 5 V
±20V
520 pF @ 25 V
2.5W (Ta), 40W (Tc)
PMV50EPEAR
PMV50EPEA - 30 V, P-CHANNEL TREN
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50,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
30 V
-55°C ~ 150°C (TJ)
SOT-23
TO-236-3, SC-59, SOT-23-3
MOSFET (Metal Oxide)
-
3V @ 250µA
4.2A (Ta)
4.5V, 10V
45mOhm @ 4.2A, 10V
19.2 nC @ 10 V
±20V
793 pF @ 15 V
310mW (Ta), 455mW (Tc)
FQD19N10LTM
POWER FIELD-EFFECT TRANSISTOR, 1
联系我们
49,789 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
TO-252, (D-Pak)
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
2V @ 250µA
15.6A (Tc)
5V, 10V
100mOhm @ 7.8A, 10V
18 nC @ 5 V
±20V
870 pF @ 25 V
2.5W (Ta), 50W (Tc)
SPW20N60C3
SPW20N60 - 600V COOLMOS N-CHANNE
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49,300 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
600 V
-55°C ~ 150°C (TJ)
PG-TO247-3-21
TO-247-3
MOSFET (Metal Oxide)
-
3.9V @ 1mA
20.7A (Tc)
10V
190mOhm @ 13.1A, 10V
114 nC @ 10 V
±20V
2400 pF @ 25 V
208W (Tc)
FDMS3662
POWER FIELD-EFFECT TRANSISTOR, 8
联系我们
48,230 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
100 V
-55°C ~ 150°C (TJ)
Power56
8-PowerTDFN
MOSFET (Metal Oxide)
-
4.5V @ 250µA
8.9A (Ta), 39A (Tc)
10V
14.8mOhm @ 8.9A, 10V
75 nC @ 10 V
±20V
4620 pF @ 50 V
2.5W (Ta), 104W (Tc)
PMV65UNER
SMASIGNFIELD-EFFETRANSISTO2.820N
联系我们
48,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FDPF44N25T
POWER FIELD-EFFECT TRANSISTOR, 4
联系我们
47,611 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
250 V
-55°C ~ 150°C (TJ)
TO-220F-3
TO-220-3 Full Pack
MOSFET (Metal Oxide)
-
5V @ 250µA
44A (Tc)
10V
69mOhm @ 22A, 10V
61 nC @ 10 V
±30V
2870 pF @ 25 V
38W (Tc)
FDS6675BZ
SMALL SIGNAL FIELD-EFFECT TRANSI
联系我们
47,500 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
30 V
-55°C ~ 150°C (TJ)
8-SOIC
8-SOIC (0.154", 3.90mm Width)
MOSFET (Metal Oxide)
-
3V @ 250µA
11A (Ta)
4.5V, 10V
13mOhm @ 11A, 10V
62 nC @ 10 V
±25V
2470 pF @ 15 V
2.5W (Ta)
FDPF18N50T
POWER FIELD-EFFECT TRANSISTOR, 1
联系我们
47,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
500 V
-55°C ~ 150°C (TJ)
TO-220F-3
TO-220-3 Full Pack
MOSFET (Metal Oxide)
-
5V @ 250µA
18A (Tc)
10V
265mOhm @ 9A, 10V
60 nC @ 10 V
±30V
2860 pF @ 25 V
38.5W (Tc)

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。